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2-mbit (128k x 16) static ram CY62136V mobl ? cypress semiconductor corporation ? 3901 north first street ? san jose , ca 95134 ? 408-943-2600 document #: 38-05087 rev. *b revised september 24, 2004 features ? temperature ranges ? commercial : 0c to 70c ? industrial : ? 40c to 85c ? automotive : ? 40c to 125c ? high speed: 55 ns and 70 ns ? 70-ns speed bin offered in both industrial and automotive grades ? wide voltage range: 2.7v-3.6v ? ultra-low active, standby power ? easy memory expansion with ce and oe features ? ttl-compatible inputs and outputs ? automatic power-down when deselected ? cmos for optimum speed/power ? package available in a standard 44-pin tsop type ii (forward pinout) package functional description [1] the CY62136V is a high-performance cmos static ram organized as 128k words by 16 bits. this device features advanced circuit design to provide ultra-low active current. this is ideal for providing more battery life ? (mobl ? ) in portable applications such as cellular telephones. the device also has an automatic power-dow n feature that significantly reduces power consumption by 99% when addresses are not toggling. the device can also be put into standby mode when deselected (ce high). the input/output pins (i/o 0 through i/o 15 ) are placed in a high-impedance state when: deselected (ce high), outputs are disabled (oe high), bhe and ble are disabled (bhe , ble high), or during a write operation (ce low, and we low). writing to the device is accomplished by taking chip enable (ce ) and write enable (we ) inputs low. if byte low enable (ble ) is low, then data from i/o pins (i/o 0 through i/o 7 ), is written into the location specified on the address pins (a 0 through a 16 ). if byte high enable (bhe ) is low, then data from i/o pins (i/o 8 through i/o 15 ) is written into the location specified on the address pins (a 0 through a 16 ). reading from the device is accomplished by taking chip enable (ce ) and output enable (oe ) low while forcing the write enable (we ) high. if byte low enable (ble ) is low, then data from the memory location specified by the address pins will appear on i/o 0 to i/o 7 . if byte high enable (bhe ) is low, then data from memory will appear on i/o 8 to i/o 15 . see the truth table at the back of this data sheet for a complete description of read and write modes. note: 1. for best practice recommendations, please refer to the cypres s application note ?system design guidelines? on http://www.cypr ess.com. logic block diagram 128k x 16 ram array i/o 0 ? i/o 7 row decoder a 8 a 7 a 6 a 5 a 2 column decoder a 11 a 12 a 13 a 14 a 15 2048 x 1024 sense amps data in drivers oe a 4 a 3 i/o 8 ? i/o 15 ce we ble bhe a 16 a 0 a 1 a 9 a 10 www.datasheet.in
CY62136V mobl ? document #: 38-05087 rev. *b page 2 of 11 product portfolio product v cc range (v) speed grades power dissipation (industrial) operating, i cc (ma) standby, i sb2 ( a) min typ. [2] max typ. [2] maximum typ. [2] maximum CY62136Vll 2.7 3.0 3.6 55 industrial 7 20 1 15 70 industrial 7 15 1 15 automotive 7 20 1 20 CY62136Vsl 55 industrial 7 20 1 5 70 industrial 7 15 1 5 pin configurations [3] we 1 2 3 4 5 6 7 8 9 10 11 14 31 32 36 35 34 33 37 40 39 38 top view tsop ii (forward) 12 13 41 44 43 42 16 15 29 30 v cc a 16 a 15 a 14 a 13 a 12 a 4 a 3 oe v ss a 5 i/o 15 a 2 ce i/o 2 i/o 0 i/o 1 bhe nc a 1 a 0 18 17 20 19 i/o 3 27 28 25 26 22 21 23 24 nc v ss i/o 6 i/o 4 i/o 5 i/o 7 a 6 a 7 ble v cc i/o 14 i/o 13 i/o 12 i/o 11 i/o 10 i/o 9 i/o 8 a 8 a 9 a 10 a 11 notes: 2. typical values are included for reference only and are not guaranteed or tested. typical values are measured at v cc = v cc typ, t a = 25c. 3. nc pins are not connected on the die www.datasheet.in
CY62136V mobl ? document #: 38-05087 rev. *b page 3 of 11 maximum ratings (above which the useful life may be impaired. for user guide- lines, not tested.) storage temperature .............. .............. ...... ?65c to +150c ambient temperature with power applied........... .............. .............. ...... ?55c to +125c supply voltage to ground potential ............... ?0.5v to +4.6v dc voltage applied to outputs in high-z state [4] ....................................?0.5v to v cc + 0.5v dc input voltage [4] .................................?0.5v to v cc + 0.5v output current into outputs (low)............................ 20 ma static discharge voltage......... .............. .............. ...... > 2001v (per mil-std-883, method 3015) latch-up current..................................................... > 200 ma operating range range ambient tempera- ture[t a ] [6] v cc industrial ? 40c to +85c 2.7v to 3.6v automotive ? 40c to +125c electrical characteristics over the operating range parameter description test conditions CY62136V-55 CY62136V-70 unit min. typ. [2] max. min. typ. [2] max. v oh output high voltage i oh = ? 1.0 ma v cc = 2.7v 2.4 2.4 v v ol output low voltage i ol = 2.1 ma v cc = 2.7v 0.4 0.4 v v ih input high voltage v cc = 3.6v 2.2 v cc + 0.5v 2.2 v cc + 0.5v v v il input low voltage v cc = 2.7v ?0.5 0.8 ?0.5 0.8 v i ix input load current gnd < v i < v cc industrial ?1 +1 ?1 +1 a automotive ?10 +10 a i oz output leakage current gnd < v o < v cc , output disabled industrial ?1 +1 ?1 +1 a automotive ?10 +10 a i cc v cc operating supply current f = f max = 1/t rc ,v cc = 3.6v, i out = 0 ma, cmos levels industrial 7 20 7 15 ma automotive 7 20 ma f = 1 mhz, 1 2 1 2 ma i sb1 automatic ce power-down current? cmos inputs ce > v cc ? 0.3v, v in > v cc ? 0.3v or v in < 0.3v, f = f max 100 100 a i sb2 automatic ce power-down current? cmos inputs ce > v cc ? 0.3v v in > v cc ? 0.3v or v in < 0.3v, f = 0 v cc = 3.6v industrial(ll) 1 15 1 15 a industrial(sl) 1 5 1 5 a automotive 1 20 a thermal resistance parameter description test conditions tsopii unit ja thermal resistance (junction to ambient) [5] still air, soldered on a 4.25 x 1.125 inch, 4-layer printed circuit board 60 c/w jc thermal resistance (junction to case) [5] 22 c/w capacitance [5] parameter description test conditions max. unit c in input capacitance t a = 25c, f = 1 mhz, v cc = v cc(typ) 6pf c out output capacitance 8 pf notes: 4. v il (min) = ?2.0v for pulse durations less than 20 ns. 5. tested initially and after any design or process changes that may affect these parameters. 6. t a is the ?instant-on? case temperature. www.datasheet.in
CY62136V mobl ? document #: 38-05087 rev. *b page 4 of 11 ac test loads and waveforms parameters 3.0v unit r1 1105 ohms r2 1550 ohms r th 645 ohms v th 1.75 volts data retention characteristics (over the operating range) parameter description conditions [8] min. typ. [2] max. unit v dr v cc for data retention 1.0 3.6 v i ccdr data retention current v cc = 1.0v, ce > v cc ? 0.3v, v in > v cc ? 0.3v or v in < 0.3v, no input may exceed v cc + 0.3v ll 0.5 7.5 a sl 5 t cdr [5] chip deselect to data retention time 0ns t r [7] operation recovery time 70 ns data retention waveform switching characteristics over the operating range [8] parameter description 55 ns 70 ns unit min. max. min. max. read cycle t rc read cycle time 55 70 ns t aa address to data valid 55 70 ns t oha data hold from address change 10 10 ns t ace ce low to data valid 55 70 ns t doe oe low to data valid 25 35 ns t lzoe oe low to low-z [9] 55ns notes: 7. full device operation requires linear v cc ramp from v dr to v cc(min) > 100 ms or stable at v cc(min) > 100 ms. 8. test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5v, input pulse levels of 0 to v cc typ., and output loading of the specified i ol /i oh and 30-pf load capacitance. 9. at any given temperature and voltage condition, t hzce is less than t lzce , t hzoe is less than t lzoe , and t hzwe is less than t lzwe for any given device. 10. t hzoe , t hzce , and t hzwe are specified with c l = 5 pf as in (b) of ac test loads. transiti on is measured 500 mv from steady-state voltage. v cc typ v cc output r2 30 pf including jig and scope gnd 90% 10% 90% 10% output v equivalent to: th venin equivalent all input pulses rth r1 v cc output r2 5 pf including jig and scope r1 rise time: 1 v/ns fall time: 1 v/ns (a) (b) (c) v cc(min.) v cc(min.) t cdr v dr > 1.0 v data retention mode t r ce v cc www.datasheet.in
CY62136V mobl ? document #: 38-05087 rev. *b page 5 of 11 t hzoe oe high to high-z [9, 10] 25 25 ns t lzce ce low to low-z [9] 10 10 ns t hzce ce high to high-z [9, 10] 25 25 ns t pu ce low to power-up 0 0 ns t pd ce high to power-down 55 70 ns t dbe ble / bhe low to data valid 25 35 ns t lzbe ble / bhe low to low-z [9, 10] 55ns t hzbe ble / bhe high to high-z [11] 25 25 ns write cycle [11, 12] t wc write cycle time 55 70 ns t sce ce low to write end 45 60 ns t aw address set-up to write end 45 60 ns t ha address hold from write end 0 0 ns t sa address set-up to write start 0 0 ns t pwe we pulse width 40 50 ns t bw ble / bhe low to write end 50 60 ns t sd data set-up to write end 25 30 ns t hd data hold from write end 0 0 ns t hzwe we low to high-z [9, 10] 20 25 ns t lzwe we high to low-z [9] 510ns switching characteristics over the operatin g range (continued) [8] parameter description 55 ns 70 ns unit min. max. min. max. switching waveforms notes: 11. the internal write time of the memory is defined by the overlap of ce low and we low. both signals must be low to initiate a write and either signal can terminate a write by going high. the data input set-up and hold timing should be referenced to the rising edge of the signal that termina tes the write. 12. the minimum write cycle time for write cycle 3 (we controlled, oe low) is the sum of t hzwe and t sd . 13. device is continuously selected. oe , ce = v il . 14. we is high for read cycle. address data out previous data valid data valid t rc t aa t oha read cycle no. 1 [13, 14] www.datasheet.in
CY62136V mobl ? document #: 38-05087 rev. *b page 6 of 11 notes: 15. address valid prior to or coincident with ce transition low. 16. data i/o is high impedance if oe = v ih . 17. if ce goes high simultaneously with we high, the output remains in a high-impedance state. 18. during this period, the i/os are in output state and input signals should not be applied. switching waveforms (continued) read cycle no. 2 [14, 15] 50% 50% data valid t rc t ace t dbe t lzbe t lzce t pu data out high impedance impedance i cc i sb t hzoe t hzce t pd oe ce high v cc supply current t hzbe bhe /ble t doe t lzoe t hd t sd t pwe t sa t ha t aw t wc data i/o address ce we oe t hzoe data in valid note write cycle no. 1 (we controlled) [11, 16, 17] 18 bhe /ble t bw www.datasheet.in
CY62136V mobl ? document #: 38-05087 rev. *b page 7 of 11 switching waveforms (continued) write cycle no. 2 (ce controlled) [11, 16, 17] t wc t aw t sa t ha t hd t sd t sce we data i/o address ce data in valid bhe /ble t bw t pwe write cycle no. 3 (we controlled, oe low) [12 , 17] data i/o address t hd t sd t lzwe t sa t ha t aw t wc ce we t hzwe data in valid note 18 bhe /ble t bw www.datasheet.in
CY62136V mobl ? document #: 38-05087 rev. *b page 8 of 11 typical dc and ac characteristics switching waveforms (continued) data i/o address t hd t sd t lzwe t sa t ha t aw t wc ce we t hzwe data in valid write cycle no. 4 (bhe /ble controlled, oe low) [18] t bw bhe /ble note 18 30 35 25 15 10 5 1.0 1.9 2.8 3.7 0 20 i sb ( a) 1.2 1.4 1.0 0.6 0.4 0.2 1.7 2.2 2.7 3.2 3.7 0.0 0.8 i cc 70 80 60 40 30 20 1.0 1.9 2.8 3.7 supply voltage (v) access time vs. supply voltage 10 50 t aa (ns) normalized operating current standby current vs. supply voltage supply voltage (v) supply voltage (v) mobl mobl mobl vs. supply voltage 2.7 2.7 www.datasheet.in
CY62136V mobl ? document #: 38-05087 rev. *b page 9 of 11 truth table ce we oe bhe ble inputs/outputs mode power h x x x x high-z deselect/power-down standby (i sb ) l h l l l data out (i/o o ?i/o 15 ) read active (i cc ) l h l h l data out (i/o o ?i/o 7 ); i/o 8 ?i/o 15 in high-z read active (i cc ) l h l l h data out (i/o 8 ?i/o 15 ); i/o 0 ?i/o 7 in high-z read active (i cc ) l h l h h high-z deselect/output disabled active (i cc ) l h h l l high-z deselect/output disabled active (i cc ) l h h h l high-z deselect/output disabled active (i cc ) l h h l h high-z deselect/output disabled active (i cc ) l l x l l data in (i/o o ?i/o 15 ) write active (i cc ) l l x h l data in (i/o o ?i/o 7 ); i/o 8 ?i/o 15 in high-z write active (i cc ) l l x l h data in (i/o 8 ?i/o 15 ); i/o 0 ?i/o 7 in high-z write active (i cc ) ordering information speed (ns) ordering code package name package type operating range 55 CY62136Vll-55zsi zs44 44-pin tsop ii industrial CY62136Vsl-55zsi industrial 70 CY62136Vll-70zsi industrial CY62136Vll-70zse automotive CY62136Vsl-70zsi industrial www.datasheet.in
CY62136V mobl ? document #: 38-05087 rev. *b page 10 of 11 ? cypress semiconductor corporation, 2004. the information contained herein is subject to change without notice. cypress semic onductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or ot her rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agr eement with cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to re sult in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manu facturer assumes all risk of such use and in doing so indemni fies cypress against all charges. mobl is a registered trademark, and more battery life is a tra demark, of cypress semiconducto r corporation. all product and company names mentioned in this document ar e the products of their respective holders. package diagrams 44-pin tsop ii zs44 51-85087-*a www.datasheet.in
CY62136V mobl ? document #: 38-05087 rev. *b page 11 of 11 document history page document title: CY62136V mobl ? 2-mbit (128k x 16) static ram document number: 38-05087 rev. ecn no. issue date orig. of change description of change ** 107347 05/25/01 szv changed from spec #: 38-00728 to 38-05087 *a 116509 09/04/02 gb i added footnote 1 added sl power bin deleted fbga package; replacement fbga package available in cy62136cv30 *b 269729 see ecn syt added automotive information for 70-ns speed bin. added footnotes # 3 and # 6. corrected typo in electrical characteristics for i cc (max)-55 ns from 15 to 20 ma. added sl row for i sb2 in the electrical characteristics table. changed package name from z44 to zs44. replaced ?z? with ?zs? in the ordering code. www.datasheet.in

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